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          博士生陈同参加国际会议回国总结报告

          发布时间:2019-09-02 点击数:

          汇报题目:参加SPIE International Symposium on Optics + Photonics 2019 参会报告

          汇报时间201992(星期二) 19:30

          汇报地点:科技园西五楼北A304会议室

          汇报人:陈同

          会议名称SPIE International Symposium on Optics + Photonics 2019

          会议时间11-15 Augus 2019

          会议地点San Diego Convention Center in San Diego, California, USA

          会议简介SPIE Optics + Photonics, the meeting where researchers gather to hear advances in optical engineering and applications, nanotechnology, quantum science, organic photonics, and astronomical instrumentation.

          The premier conference for the latest developments in optical design and engineering, including photonic devices and applications, x-ray, gamma-ray, and particle technologies, image and signal processing, astronomical optics and instrumentation, optics and photonics for sustainable energy, remote sensing, and space optical systems.

          会议交流工作

          Oral presentation: Heat accumulation effect existing in silicon substrate by femtosecond laser irradiation on antireflection performance

          报告人:陈同

          参加论文信息

          Title: Heat accumulation effect existing in silicon substrate by femtosecond laser irradiation on antireflection performance

          Author: Tong Chen, Wenjun Wang, Tao Tao, Xuesong Mei, Aifei Pan

          Abstract: Reducing the reflection of silicon surface is an effective way to enhance its optical absorption performance in optical and optoelectronic devices. In this paper, the influence mechanism of heat accumulation effect existing in the material substrate on the multi-scale porosity properties of surface structure during femtosecond laser irradiation is investigated. Micro-nano structures will lose their multi-scale porous properties at high-repetition-rate laser irradiation due to excessive agglomeration, nucleation or melting. By rapidly cooling the material substrate, the porosity of surface micro-nano structure are optimized, and the antireflection performance of the material surface is improved obviously. Our study opens a novel and convenient route for preparation of broadband antireflective black silicon surfaces for various applications.


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